دیتاشیت IXTH52N65X/HS1549/S14446
مشخصات دیتاشیت
| نام دیتاشیت | IXTH52N65X |
|---|---|
| حجم فایل | 213.036 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 6 |
دانلود دیتاشیت IXTH52N65X |
IXTH52N65X Datasheet |
|---|
مشخصات
- Manufacturer: IXYS
- Series: -
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 68mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 660W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
- detail: N-Channel 650V 52A (Tc) 660W (Tc) Through Hole TO-247 (IXTH)
